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| 2N4402, 2N4403 PNP Version 2004-01-20 General Purpose Transistors Si-Epitaxial PlanarTransistors PNP Power dissipation - Verlustleistung Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E 625 mW TO-92 (10D3) 0.18 g Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Junction temp. - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCE0 - VCE0 - VEB0 Ptot - IC Tj TS Grenzwerte (TA = 25C) 2N4402, 2N4403 40 V 40 V 5V 625 mW 1) 600 mA 150C - 55...+ 150C Characteristics (Tj = 25C) Min. Collector saturation volt. - Kollektor-Sattigungsspannung - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA Collector cutoff current - Kollektorreststrom - VCE = 35 V, - VEB = 0.4 V Emitter cutoff current - Emitterreststrom - VCE = 35 V, - VEB = 0.4 V - IEBV - - ICBV - - VCEsat - VCEsat - VBEsat - VBEsat - - 750 mV - Kennwerte (Tj = 25C) Typ. - - - - - - Max. 400 mV 750 mV 950 mV 1.3 V 100 nA 100 nA Base saturation voltage - Basis-Sattigungsspannung 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 36 General Purpose Transistors Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis - VCE = 1 V, - IC = 0.1 mA - VCE = 1 V, - IC = 1 mA - VCE = 1 V, - IC = 10 mA - VCE = 1 V, - IC = 150 mA - VCE = 1 V, - IC = 500 mA 2N4403 2N4402 2N4403 2N4402 2N4403 2N4402 2N4403 2N4402 2N4403 2N4402 2N4403 2N4402 2N4403 hFE hFE hFE hFE hFE hFE hFE hFE hFE hfe hfe hie hie hoe hre fT fT CCB0 CEB0 ton td tr toff ts tf 30 30 60 50 100 50 100 20 20 30 60 0.75 kS 1.5 kS 1 S 0.1 *10-4 150 MHz 200 MHz - - - - - - - - RthA - - - - - - - - - - - - - - - - - - - - - - - - - 2N4402, 2N4403 Kennwerte (Tj = 25C) Typ. Max. - - - - - 150 300 - - 250 500 7.5 kS 15 kS 100 S 8 *10-4 - - 8.5 pF 30 pF 35 ns 15 ns 20 ns 255 ns 225 ns 30 ns 200 K/W 1) 2N4400, 2N4401 h-Parameters at - VCE = 10 V, - IC = 1 mA, f = 1 kHz Small signal current gain Kleinsignal-Stromverstarkung Input impedance Eingangs-Impedanz Output admittance - Ausgangs-Leitwert Reverse voltage ratio - Spannungsruckwirkg. Gain-Bandwidth Product - Transitfrequenz - VCE = 10 V, - IC = 20 mA, f = 100 MHz 2N4402 2N4403 Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, - IE = ie = 0, f = 1 MHz VEB = 2 V, IC = ic = 0, f = 1 MHz Switching times - Schaltzeiten turn-on time delay time rise time turn-off time storage time fall time Emitter-Base Capacitance - Emitter-Basis-Kapazitat - ICon = 150 mA - IBon = 15 mA IBoff = 15 mA Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 37 |
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